msagz52f120a MSAHZ52F120A 1200 volts 52 amps 3.2 volts vce (sat) features rugged polysilicon gate cell structure high current handling capability, latch-proof hermetically sealed, surface mount power package low package inductance very low thermal resistance reverse polarity available upon request: msah(g)z52f120b high frequency igbt, low switching losses anti-parallel frediode (MSAHZ52F120A only) description symbol max. unit collector-to-emitter breakdown voltage (gate shorted to emitter) @ t j 3 25 c bv ces 1200 volts collector-to-gate breakdown voltage @ t j 3 25 c, r gs = 1 m w bv cgr 1200 volts continuous gate-to-emitter voltage v ges +/-20 volts transient gate-to-emitter voltage v gem +/-30 volts continuous collector current tj= 25 c tj= 90 c i c25 i c90 52 33 amps peak collector current (pulse width limited by t jmax ,) tj= 25 c tj= 90 c i cm(25) i cm(90) 104 66 amps avalanche energy (single pulse) @ i c = 25a, v cc = 50v, l= 200 m h, r g = 25 w , tj= 25 c e as 65 mj short circuit current (soa) , v ce 1200v, t j = 150 c, t sc 10 m s i c( sc ) 260 a short circuit (reverse) current (rbsoa) , v ce 1200v, t j = 150 c i c( sc )rbsoa 66 a power dissipation p d 300 watts junction temperature range t j -55 to +150 c storage temperature range t stg -55 to +150 c continuous source current (body diode, MSAHZ52F120A only) i s 50 amps pulse source current (body diode, MSAHZ52F120A only) i s m 100 amps thermal resistance, junction to case q jc 0.4 c/w maximum ratings @ 25 c (unless otherwise specified) mechanical outline datasheet# msc0295a 2830 s. fairview st. santa ana, ca 92704 ph: (714) 979-8220 fax: (714) 966-5256
description symbol conditions min typ. max unit collector-to-emitter breakdown voltage (gate shorted to emitter) bv ces v gs = 0 v, i c = 250 m a 1200 v gate threshold voltage v ge( th ) v ce = v ge , i c = 350 m a 4.5 5.5 6.5 v gate-to-emitter leakage current i ges v ge = 20v dc , v ce = 0 t j = 25 c t j = 125 c 100 200 na collector-to-emitter leakage current (zero gate voltage collector current) i ces v ce =0.8 bv ces t j = 25 c v ge = 0 v t j = 125 c 250 1000 m a collector-to-emitter saturation voltage (1) v ce(sat) v ge = 15v, i c = 25a t j = 25 c i c = 25a t j = 125 c i c = 60a t j = 25 c i c = 30a t j = 125 c 2.7 3.3 3.4 4.3 3.2 3.9 v forward transconductance (1) g fs v ce = 20 v; i c = 25 a 8.5 20 s input capacitance output capacitance reverse transfer capacitance c ies c oes c res v ge = 0 v, v ce = 25 v, f = 1 mhz 1650 250 110 2200 380 160 pf inductive load, tj= 125 c turn-on delay time rise time on energy turn-off delay time fall time off energy t d(on) t ri e on t d(off) t fi e off v ge = 15 v, v ce = 600 v, i c = 25 a, r g = 47 w , l= 100 m h note 2, 3 75 65 3.6 420 45 2.4 110 100 560 60 ns ns mj ns ns mj inductive load, tj= 125 c turn-on delay time rise time on energy turn-off delay time fall time off energy t d(on) t ri e on t d(off) t fi e off v ge = 15 v, v ce = 600 v, i c = 50 a, r g = 47 w , l= 100 m h note 2, 3 95 90 10 420 45 4.2 ns ns mj ns ns mj total gate charge gate-to-emitter charge gate-to-collector (miller) charge q g q ge q gc v ge = 15 v, v ce = 600v, i c = 25a 160 20 75 nc antiparallel diode forward voltage (MSAHZ52F120A only) v f i e = 10 a t j = 25 c i e = 10 a t j = 100 c 2.4 2 3 v v antiparallel diode reverse recovery time (MSAHZ52F120A only) t rr i e = 10 a, di e / dt= 100 a/us, t j = 25 c i e = 10 a, di e / dt= 800 a/us, t j = 125 c 60 tbd ns ns antiparallel diode reverse recovery charge (MSAHZ52F120A only) q rr i e = 10 a, di e / dt= 100 a/us, t j = 25 c i e = 10 a, di e / dt= 800 a/us, t j = 125 c 800 tbd nc nc antiparallel diode peak recovery current (MSAHZ52F120A only) i rm i e = 10 a, di e / dt= 100 a/us, t j = 25 c i e = 10 a, di e / dt= 800 a/us, t j = 125 c 22 tbd a a electrical parameters @ 25 c (unless otherwise specified) notes (1) pulse test, t 300 m m s, duty cycle d d 2% (2) switching times and losses may increase for larger v ce and/or r g values or higher junction temperatures. (3) switching losses include ?tail? losses (4) microsemi corp. does not manufacture the igbt die; contact company for details. msagz52f120a MSAHZ52F120A
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